型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: MOS管描述: STMICROELECTRONICS STP60NF06 晶体管, MOSFET, N沟道, 60 A, 60 V, 16 mohm, 10 V, 2 V92645-24¥2.983525-49¥2.762550-99¥2.6078100-499¥2.5415500-2499¥2.49732500-4999¥2.44215000-9999¥2.4200≥10000¥2.3868
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品类: MOS管描述: N 通道 STripFET™ II,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics88165-24¥3.469525-49¥3.212550-99¥3.0326100-499¥2.9555500-2499¥2.90412500-4999¥2.83995000-9999¥2.8142≥10000¥2.7756
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品类: MOS管描述: STMICROELECTRONICS STF9NK90Z 功率场效应管, MOSFET, N沟道, 3.6 A, 900 V, 1.1 ohm, 10 V, 3.75 V42485-24¥6.318025-49¥5.850050-99¥5.5224100-499¥5.3820500-2499¥5.28842500-4999¥5.17145000-9999¥5.1246≥10000¥5.0544
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品类: MOS管描述: P 沟道 STripFET™ 功率 MOSFET,STMicroelectronics STripFET™ MOSFET,带宽击穿电压范围,可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管,STMicroelectronics297110-99¥10.5360100-499¥10.0092500-999¥9.65801000-1999¥9.64042000-4999¥9.57025000-7499¥9.48247500-9999¥9.4122≥10000¥9.3770
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品类: MOS管描述: STMICROELECTRONICS STP4NK60Z 功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V40595-24¥1.741525-49¥1.612550-99¥1.5222100-499¥1.4835500-2499¥1.45772500-4999¥1.42555000-9999¥1.4126≥10000¥1.3932
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品类: MOS管描述: N 通道 STripFET™,STMicroelectronics50005-49¥11.887250-199¥11.3792200-499¥11.0947500-999¥11.02361000-2499¥10.95252500-4999¥10.87125000-7499¥10.8204≥7500¥10.7696
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品类: MOS管描述: N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics60375-49¥12.729650-199¥12.1856200-499¥11.8810500-999¥11.80481000-2499¥11.72862500-4999¥11.64165000-7499¥11.5872≥7500¥11.5328
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品类: MOS管描述: STMICROELECTRONICS STP11NM60 场效应管, MOSFET, N沟道, 650V, 11A, TO-22090155-49¥17.070350-199¥16.3408200-499¥15.9323500-999¥15.83021000-2499¥15.72802500-4999¥15.61135000-7499¥15.5384≥7500¥15.4654
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品类: MOS管描述: STMICROELECTRONICS STP5NK60Z 功率场效应管, MOSFET, N沟道, 5 A, 600 V, 1.2 ohm, 10 V, 3.75 V76865-24¥2.160025-49¥2.000050-99¥1.8880100-499¥1.8400500-2499¥1.80802500-4999¥1.76805000-9999¥1.7520≥10000¥1.7280
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品类: MOS管描述: STMICROELECTRONICS STP40NF10 晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V19795-24¥3.861025-49¥3.575050-99¥3.3748100-499¥3.2890500-2499¥3.23182500-4999¥3.16035000-9999¥3.1317≥10000¥3.0888
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品类: MOS管描述: STMICROELECTRONICS STP20NF20 晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V99485-49¥11.957450-199¥11.4464200-499¥11.1602500-999¥11.08871000-2499¥11.01722500-4999¥10.93545000-7499¥10.8843≥7500¥10.8332
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品类: MOS管描述: STMICROELECTRONICS STFW3N150 功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 6 ohm, 10 V, 4 V485710-99¥8.1120100-499¥7.7064500-999¥7.43601000-1999¥7.42252000-4999¥7.36845000-7499¥7.30087500-9999¥7.2467≥10000¥7.2197
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品类: MOS管描述: N 通道 STripFET™,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics854910-99¥11.3640100-499¥10.7958500-999¥10.41701000-1999¥10.39812000-4999¥10.32235000-7499¥10.22767500-9999¥10.1518≥10000¥10.1140
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品类: MOS管描述: N 通道 MDmesh™ SuperMESH™,700V 至 1200V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics1500
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品类: MOS管描述: N 通道 MDmesh™,500V,STMicroelectronics ### MOSFET 晶体管,STMicroelectronics62265-49¥15.104750-199¥14.4592200-499¥14.0977500-999¥14.00741000-2499¥13.91702500-4999¥13.81375000-7499¥13.7492≥7500¥13.6846
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品类: MOS管描述: N沟道950 V, 1 I © (典型值) , 9齐纳保护SuperMESHâ ??在DPAK ¢ 5功率MOSFET , TO- 220FP , TO- 220 , TO- 247和IPAK N-channel 950 V, 1 Ω typ., 9 A Zener-protected SuperMESH⢠5 Power MOSFET in DPAK, TO-220FP, TO-220, TO-247 and IPAK22875-24¥5.008525-49¥4.637550-99¥4.3778100-499¥4.2665500-2499¥4.19232500-4999¥4.09965000-9999¥4.0625≥10000¥4.0068
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品类: MOS管描述: STMICROELECTRONICS STFW4N150 功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 5 ohm, 10 V, 4 V37381-9¥46.433210-99¥43.7690100-249¥41.7899250-499¥41.4854500-999¥41.18091000-2499¥40.83842500-4999¥40.5339≥5000¥40.3436
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品类: MOS管描述: STMICROELECTRONICS SCT30N120 功率场效应管, MOSFET, N沟道, 40 A, 1.2 kV, 0.08 ohm, 20 V, 2.6 V16991-9¥171.430510-49¥166.958450-99¥163.5298100-199¥162.3372200-499¥161.4428500-999¥160.25031000-1999¥159.5049≥2000¥158.7596
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品类: MOS管描述: SCT20N120 系列 1200 V 290 mOhm 20 A 碳化硅 功率 Mosfet - HiP247™42481-9¥128.650510-49¥125.294450-99¥122.7214100-199¥121.8264200-499¥121.1552500-999¥120.26031000-1999¥119.7009≥2000¥119.1416
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品类: MOS管描述: STMICROELECTRONICS PD55003-E 晶体管, 射频FET, 40 V, 2.5 A, 31.7 W, 1 GHz, PowerSO-10RF71461-9¥47.702010-99¥44.9650100-249¥42.9318250-499¥42.6190500-999¥42.30621000-2499¥41.95432500-4999¥41.6415≥5000¥41.4460
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品类: 双极性晶体管描述: ON SEMICONDUCTOR MJE15034G. 晶体管, NPN778110-99¥6.4680100-499¥6.1446500-999¥5.92901000-1999¥5.91822000-4999¥5.87515000-7499¥5.82127500-9999¥5.7781≥10000¥5.7565
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品类: 双极性晶体管描述: PNP 功率晶体管,ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。 ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声,双匹配和复杂的双极晶体管30115-24¥5.980525-49¥5.537550-99¥5.2274100-499¥5.0945500-2499¥5.00592500-4999¥4.89525000-9999¥4.8509≥10000¥4.7844
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品类: 双极性晶体管描述: ON SEMICONDUCTOR MC1413BDG 双极晶体管阵列, 达林顿, NPN, 2 V, 500 mA, 1000 hFE, SOIC87735-24¥1.431025-49¥1.325050-99¥1.2508100-499¥1.2190500-2499¥1.19782500-4999¥1.17135000-9999¥1.1607≥10000¥1.1448
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品类: MOS管描述: Mosfet n-Ch Isoplus24721361-9¥214.555510-49¥208.958450-99¥204.6673100-199¥203.1747200-499¥202.0553500-999¥200.56281000-1999¥199.6299≥2000¥198.6971
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品类: MOS管描述: IXTT 系列 单通道 N 沟道 250 V 27 mOhm 600 W 功率 Mosfet - TO-26882115-24¥3.037525-49¥2.812550-99¥2.6550100-499¥2.5875500-2499¥2.54252500-4999¥2.48635000-9999¥2.4638≥10000¥2.4300
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品类: MOS管描述: TO-268 N-CH 1200V 6A11301-9¥69.931510-99¥66.8910100-249¥66.3437250-499¥65.9180500-999¥65.24911000-2499¥64.94512500-4999¥64.5194≥5000¥64.1546
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品类: MOS管描述: N沟道 100V 130A251510-99¥9.9720100-499¥9.4734500-999¥9.14101000-1999¥9.12442000-4999¥9.05795000-7499¥8.97487500-9999¥8.9083≥10000¥8.8751
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 1.2kV 110A 4Pin SOT-227B850420-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: Trans MOSFET N-CH 500V 44A 3Pin(3+Tab) PLUS 247 Trans MOSFET N-CH 500V 44A 3Pin(3+Tab) PLUS 24748661-9¥117.495510-49¥114.430450-99¥112.0805100-199¥111.2631200-499¥110.6501500-999¥109.83281000-1999¥109.3219≥2000¥108.8111
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品类: MOS管描述: N 通道功率 MOSFET,IXYS HiperFET™ Q3 系列 HiperFET™ Power MOSFET 的 IXYS Q3 类极其适用于硬切换和谐振模式应用,可提供带有卓越强度的低栅极电荷。 该设备包含一个快速本质二极管且提供各种工业标准封装,包括隔离类型,带有额定值高达 1100V 和 70A。 典型应用包括直流-直流转换器、电池充电器、开关模式和谐振模式电源、直流斩波器、温度和照明控制。 快速本质整流器二极管 低 RDS(接通)和 QG(栅极电荷) 低本质栅极电阻 工业标准封装 低封装电感 高功率密度61651-9¥199.582510-49¥194.376050-99¥190.3844100-199¥188.9960200-499¥187.9547500-999¥186.56631000-1999¥185.6985≥2000¥184.8308